PartNumber | SISS23DN-T1-GE3 | SISS22DN-T1-GE3 | SISS23DN |
Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8S | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 60 V | - |
Id Continuous Drain Current | 50 A | 90.6 A | - |
Rds On Drain Source Resistance | 3.5 mOhms | 4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 900 mV | 2 V | - |
Vgs Gate Source Voltage | 8 V | 20 V | - |
Qg Gate Charge | 300 nC | 44 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 57 W | 65.7 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Height | 1.04 mm | - | - |
Length | 3.3 mm | - | - |
Series | SIS | SIS | - |
Transistor Type | 1 P-Channel | 1 N-Channel TrenchFET Power MOSFET | - |
Width | 3.3 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 44 S | 50 S | - |
Fall Time | 50 ns | 6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 50 ns | 6 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 140 ns | 20 ns | - |
Typical Turn On Delay Time | 45 ns | 12 ns | - |