SQ3457EV-T1_GE3 vs SQ3457EV vs SQ3457KGD

 
PartNumberSQ3457EV-T1_GE3SQ3457EVSQ3457KGD
DescriptionMOSFET P-Channel 30V AEC-Q101 QualifiedSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.8A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6.8 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min9 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time6 ns--
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