SQ4431EY-T1_GE3 vs SQ4431EY-T1 vs SQ4431EY-T1-E3

 
PartNumberSQ4431EY-T1_GE3SQ4431EY-T1SQ4431EY-T1-E3
DescriptionMOSFET 30V 10.8A 6W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10.8 A--
Rds On Drain Source Resistance22 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation6 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSQ--
Transistor Type1 P-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min25 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.017870 oz--
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