SQ4483BEEY-T1_GE3 vs SQ4483BEEY-T1-E3 vs SQ4483EEY

 
PartNumberSQ4483BEEY-T1_GE3SQ4483BEEY-T1-E3SQ4483EEY
DescriptionMOSFET P-Channel 30V AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current22 A--
Rds On Drain Source Resistance7 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge113 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation7 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min32 S--
Fall Time178 us--
Product TypeMOSFET--
Rise Time82 us--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time134 us--
Typical Turn On Delay Time38 us--
Unit Weight0.002610 oz--
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