SQ4840EY-T1_GE3 vs SQ4840EY vs SQ4840EY-T1-E3

 
PartNumberSQ4840EY-T1_GE3SQ4840EYSQ4840EY-T1-E3
DescriptionMOSFET 40V 10A 1.56W AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current20.7 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge62 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation7.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
SeriesSQ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min45 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.006596 oz--
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