SQD25N06-22L_T4GE3 vs SQD25N06-22L_GE3 vs SQD25N06-22L

 
PartNumberSQD25N06-22L_T4GE3SQD25N06-22L_GE3SQD25N06-22L
DescriptionMOSFET 60V 25A 62W AEC-Q101 QualifiedMOSFET 60V 25A 62W AEC-Q101 Qualified
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current25 A25 A-
Rds On Drain Source Resistance18 mOhms18 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge50 nC50 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation62 W62 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
SeriesSQSQ-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min32 S32 S-
Fall Time6 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time8 ns8 ns-
Unit Weight0.011993 oz0.002822 oz-
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