SQD45P03-12_GE3 vs SQD45P03-12-T4_GE3 vs SQD45P03-12

 
PartNumberSQD45P03-12_GE3SQD45P03-12-T4_GE3SQD45P03-12
DescriptionMOSFET 30V 50A 71W AEC-Q101 QualifiedMOSFET -30V Vds 20V Vgs TO-252
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance8 mOhms10 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V- 2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge83 nC83 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation71 W71 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReel--
SeriesSQSQ-
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min34 S34 S-
Fall Time19 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns11 ns-
Factory Pack Quantity20001-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns29 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.050717 oz--
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