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| PartNumber | SQM30010EL_GE3 | SQM300JB-0R12 | SQM300JB-0R15 |
| Description | MOSFET 30V Vds 20V Vgs TO-263 | Wirewound Resistors - Through Hole | Wirewound Resistors - Through Hole |
| Manufacturer | Vishay | Yageo | Yageo |
| Product Category | MOSFET | Wirewound Resistors - Through Hole | Wirewound Resistors - Through Hole |
| RoHS | Y | - | - |
| Technology | Si | Wirewound | Wirewound |
| Mounting Style | SMD/SMT | PCB Mount | PCB Mount |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.35 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 450 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Transistor Type | 1 N-Channel TrenchFET Power MOSFET | - | - |
| Brand | Vishay / Siliconix | Yageo | Yageo |
| Forward Transconductance Min | 233 S | - | - |
| Fall Time | 44 ns | - | - |
| Product Type | MOSFET | Wirewound Resistors | Wirewound Resistors |
| Rise Time | 240 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | Resistors | Resistors |
| Typical Turn Off Delay Time | 98 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Series | - | SQM | SQM |