SS8550BTA vs SS8550B vs SS8550BBU

 
PartNumberSS8550BTASS8550BSS8550BBU
DescriptionBipolar Transistors - BJT TO92 PNP 2W A/PTRANS PNP 25V 1.5A TO-92
ManufacturerON SemiconductorFairchild SemiconductorFairchild Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3 Kinked Lead--
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 0.28 V- 0.28 V- 0.28 V
Maximum DC Collector Current1.5 A1.5 A1.5 A
Gain Bandwidth Product fT200 MHz200 MHz200 MHz
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSS8550--
DC Current Gain hFE Max300300300
Height4.7 mm--
Length4.7 mm--
PackagingAmmo PackBulkBulk
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 1.5 A- 1.5 A- 1.5 A
DC Collector/Base Gain hfe Min85--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.006286 oz0.006314 oz0.006314 oz
Package Case-TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA)
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-92-3TO-92-3
Power Max-1W1W
Transistor Type-PNPPNP
Current Collector Ic Max-1.5A1.5A
Voltage Collector Emitter Breakdown Max-25V25V
DC Current Gain hFE Min Ic Vce-85 @ 100mA, 1V85 @ 100mA, 1V
Vce Saturation Max Ib Ic-500mV @ 80mA, 800mA500mV @ 80mA, 800mA
Current Collector Cutoff Max-100nA (ICBO)100nA (ICBO)
Frequency Transition-200MHz200MHz
Pd Power Dissipation-1 W1 W
Collector Emitter Voltage VCEO Max-- 25 V- 25 V
Collector Base Voltage VCBO-- 40 V- 40 V
Emitter Base Voltage VEBO-- 6 V- 6 V
DC Collector Base Gain hfe Min-8585
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