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| PartNumber | STB120N4F6 | STB120N10F4 | STB1200S |
| Description | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | MOSFET N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) DeepGATE(TM) Power MOSFET in D2PAK package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 100 V | - |
| Id Continuous Drain Current | 80 A | 120 A | - |
| Rds On Drain Source Resistance | 4 mOhms | 8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 65 nC | 131 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 110 W | 300 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | STripFET | - | - |
| Packaging | Reel | Reel | - |
| Series | STB120N4F6 | STB120N10F4 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.077603 oz | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 79 ns | - |
| Rise Time | - | 116 ns | - |
| Typical Turn Off Delay Time | - | 111 ns | - |
| Typical Turn On Delay Time | - | 32 ns | - |