STB24NM60N vs STB24NM65N vs STB24NM65NT4

 
PartNumberSTB24NM60NSTB24NM65NSTB24NM65NT4
DescriptionMOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh IIMOSFET N-Channel 650V 0.16 Ohms 19A
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current17 A19 A-
Rds On Drain Source Resistance168 mOhms160 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V25 V-
Qg Gate Charge46 nC--
Pd Power Dissipation125 W160 W-
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingReelReel-
SeriesSTB24NM60NSTB24NM65N-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time37 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time16.5 ns10 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Height-4.6 mm-
Length-10.4 mm-
Type-Power MOSFETs-
Width-9.35 mm-
Forward Transconductance Min-14 S-
Typical Turn Off Delay Time-80 ns-
Typical Turn On Delay Time-25 ns-
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