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| PartNumber | STB25N80K5 | STB25NF06LAG | STB25NF06AG |
| Description | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | MOSFET Automotive-grade N-channel 60 V, 53 mOhm typ., 20 A STripFET II Power MOSFET in a D2PAK package | MOSFET Automotive-grade N-channel 60 V, 0.056 Ohm typ., 19 A STripFET II Power MOSFET in a D2PAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 60 V | 60 V |
| Id Continuous Drain Current | 19.5 A | - | 19 A |
| Rds On Drain Source Resistance | 260 mOhms | - | 56 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - | 2 V |
| Vgs Gate Source Voltage | 30 V | - | 20 V |
| Qg Gate Charge | 40 nC | - | 14.1 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 175 C |
| Pd Power Dissipation | 250 W | - | 50 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | STripFET | STripFET |
| Packaging | Reel | - | - |
| Series | STB25N80K5 | STB25NF06LAG | STB25NF06AG |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.077603 oz | 0.077603 oz |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Fall Time | - | - | 15 ns |
| Rise Time | - | - | 27 ns |
| Typical Turn Off Delay Time | - | - | 28 ns |
| Typical Turn On Delay Time | - | - | 8 ns |