STB3N62K3 vs STB3N60 vs STB3NA80

 
PartNumberSTB3N62K3STB3N60STB3NA80
DescriptionMOSFET N-channel 620V, 2.7A Power MOSFET
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage620 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.6 mm--
Length10.4 mm--
SeriesSTB3N62K3--
Transistor Type1 N-Channel--
Width9.35 mm--
BrandSTMicroelectronics--
Fall Time15.6 ns--
Product TypeMOSFET--
Rise Time6.8 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.139332 oz--
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