STB8N65M5 vs STB8N50 vs STB8N50ET4

 
PartNumberSTB8N65M5STB8N50STB8N50ET4
DescriptionMOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7ANFET D2PAK SPCL 500V TR
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance560 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
TradenameMDmesh--
PackagingReel--
SeriesSTB8N65M5--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
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