STD120N4F6 vs STD120N4LF6 vs STD120F

 
PartNumberSTD120N4F6STD120N4LF6STD120F
DescriptionMOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATEMOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance4 mOhms3.6 mOhms-
Vgs th Gate Source Threshold Voltage4 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge65 nC80 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenameSTripFETSTripFET-
PackagingReelReel-
SeriesSTD120N4F6STD120N4LF6-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz-
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