STE70NM50 vs STE70IE120 vs STE70IE120 ES

 
PartNumberSTE70NM50STE70IE120STE70IE120 ES
DescriptionMOSFET N-Ch 500 Volt 70 Amp Power MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseISOTOP-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance50 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation600 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.1 mm--
Length38.2 mm--
SeriesSTE70NM50--
Transistor Type1 N-Channel--
TypeMOSFET--
Width25.5 mm--
BrandSTMicroelectronics--
Forward Transconductance Min35 S--
Fall Time46 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn On Delay Time51 ns--
Unit Weight1 oz--
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