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| PartNumber | STF11NM60ND | STF11NM60N | STF11NM60N F11NM60N |
| Description | MOSFET N-Ch, 600V-0.37ohms FDMesh 10A | MOSFET N-channel MOSFET | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 450 mOhms | 450 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 30 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 90 W | 25 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | FDmesh | - | - |
| Packaging | Tube | Tube | - |
| Height | 9.3 mm | 9.3 mm | - |
| Length | 10.4 mm | 10.4 mm | - |
| Series | STF11NM60ND | STB11NM60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.6 mm | 4.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Forward Transconductance Min | 7.5 S | - | - |
| Fall Time | 9 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7 ns | 18.5 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 50 ns | - |
| Typical Turn On Delay Time | 16 ns | 22 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |