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| PartNumber | STFI13N65M2 | STFI130N10F3 | STFI13N60M2 |
| Description | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package | MOSFET N-Ch 100 V 8 mOhm 46 A STripFET | RF Bipolar Transistors MOSFET N-CH 600V 0.35Ohm 11A MDmesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-281-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 100 V | - |
| Id Continuous Drain Current | 10 A | 120 A | - |
| Rds On Drain Source Resistance | 430 mOhms | 7.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 25 V | 20 V | - |
| Qg Gate Charge | 17 nC | 57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 25 W | 35 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 4.6 mm | - | - |
| Length | 16.4 mm | - | - |
| Product | Power MOSFET | - | - |
| Series | STFI13N65M2 | STFI130N10F3 | MDmesh M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MDmesh M2 | - | - |
| Width | 10.4 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 12 ns | 7.2 ns | 9.5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.8 ns | 38 ns | 10 ns |
| Factory Pack Quantity | 1500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 52 ns | 41 ns |
| Typical Turn On Delay Time | 11 ns | 17 ns | 11 ns |
| Unit Weight | 0.050717 oz | 0.079014 oz | - |
| Packaging | - | Tube | Tube |
| Package Case | - | - | I2PAKFP-3 |
| Pd Power Dissipation | - | - | 25 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 11 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 380 mOhms |
| Qg Gate Charge | - | - | 17 nC |