PartNumber | STFI13N65M2 | STFI13N80K5 | STFI13N60M2 |
Description | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package | Darlington Transistors MOSFET POWER MOSFET | RF Bipolar Transistors MOSFET N-CH 600V 0.35Ohm 11A MDmesh II |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 10 A | - | - |
Rds On Drain Source Resistance | 430 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 17 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 25 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Height | 4.6 mm | - | - |
Length | 16.4 mm | - | - |
Product | Power MOSFET | - | - |
Series | STFI13N65M2 | MDmesh K5 | MDmesh M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MDmesh M2 | - | - |
Width | 10.4 mm | - | - |
Brand | STMicroelectronics | - | - |
Fall Time | 12 ns | 16 ns | 9.5 ns |
Product Type | MOSFET | - | - |
Rise Time | 7.8 ns | 16 ns | 10 ns |
Factory Pack Quantity | 1500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 38 ns | 42 ns | 41 ns |
Typical Turn On Delay Time | 11 ns | 16 ns | 11 ns |
Unit Weight | 0.050717 oz | 0.050717 oz | - |
Packaging | - | Tube | Tube |
Package Case | - | I2PAK-3 | I2PAKFP-3 |
Pd Power Dissipation | - | 35 W | 25 W |
Vgs Gate Source Voltage | - | 30 V | 25 V |
Id Continuous Drain Current | - | 12 A | 11 A |
Vds Drain Source Breakdown Voltage | - | 800 V | 650 V |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Rds On Drain Source Resistance | - | 450 mOhms | 380 mOhms |
Qg Gate Charge | - | 29 nC | 17 nC |