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| PartNumber | STGB10NB37LZ | STGB10NB37LZ GB10NB37LZ | STGB10NB37 |
| Description | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | D2PAK-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.8 V | - | - |
| Collector Emitter Saturation Voltage | 1.2 V | - | - |
| Maximum Gate Emitter Voltage | 16 V | - | - |
| Continuous Collector Current at 25 C | 20 A | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | STGB10NB37LZ | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 20 A | - | - |
| Height | 4.6 mm | - | - |
| Length | 10.4 mm | - | - |
| Width | 9.35 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Continuous Collector Current | 20 A | - | - |
| Gate Emitter Leakage Current | 700 uA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.079014 oz | - | - |