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| PartNumber | STGB10NB37LZT4 | STGB10NB37LZ | STGB10NB37LZ GB10NB37LZ |
| Description | IGBT Transistors 10 A - 410 V Int Clamped IGBT | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | D2PAK-3 | D2PAK-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 440 V | 1.8 V | - |
| Maximum Gate Emitter Voltage | 16 V | 16 V | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | STGB10NB37LZ | STGB10NB37LZ | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Tube | - |
| Continuous Collector Current Ic Max | 20 A | 20 A | - |
| Height | 4.6 mm | 4.6 mm | - |
| Length | 10.4 mm | 10.4 mm | - |
| Width | 9.35 mm | 9.35 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.079014 oz | 0.079014 oz | - |
| Collector Emitter Saturation Voltage | - | 1.2 V | - |
| Continuous Collector Current at 25 C | - | 20 A | - |
| Pd Power Dissipation | - | 125 W | - |
| Continuous Collector Current | - | 20 A | - |
| Gate Emitter Leakage Current | - | 700 uA | - |