STGB6M65DF2 vs STGB6NC60 vs STGB6NC60HD

 
PartNumberSTGB6M65DF2STGB6NC60STGB6NC60HD
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.55 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation88 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesSTGB6M65DF2PowerMESHPowerMESH
Continuous Collector Current Ic Max12 A--
BrandSTMicroelectronics--
Gate Emitter Leakage Current+/- 250 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Packaging-TubeTube
Package Case-TO-262-3 Long Leads, I2Pak, TO-262AATO-262-3 Long Leads, I2Pak, TO-262AA
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-I2PAKI2PAK
Power Max-56W56W
Reverse Recovery Time trr-21ns21ns
Current Collector Ic Max-15A15A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm-21A21A
Vce on Max Vge Ic-2.5V @ 15V, 3A2.5V @ 15V, 3A
Switching Energy-20μJ (on), 68μJ (off)20μJ (on), 68μJ (off)
Gate Charge-13.6nC13.6nC
Td on off 25°C-12ns/76ns12ns/76ns
Test Condition-390V, 3A, 10 Ohm, 15V390V, 3A, 10 Ohm, 15V
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