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| PartNumber | STGP10NB60SD | STGP10NB60S | STGP10NB60SDFP |
| Description | IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH | IGBT Transistors N-Ch 600 Volt 10 Amp | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Pd Power Dissipation | 3.5 W | 80 W | - |
| Minimum Operating Temperature | - 65 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | STGP10NB60SD | STGP10NB60S | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 20 A | 20 A | - |
| Height | 9.15 mm | 9.15 mm | - |
| Length | 10.4 mm | 10.4 mm | - |
| Width | 4.6 mm | 4.6 mm | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Collector Emitter Saturation Voltage | - | 1.7 V | - |
| Continuous Collector Current at 25 C | - | 20 A | - |
| Continuous Collector Current | - | 10 A | - |
| Gate Emitter Leakage Current | - | +/- 100 nA | - |