STGP12NB60HD vs STGP12NB60K vs STGP12NB60H

 
PartNumberSTGP12NB60HDSTGP12NB60KSTGP12NB60H
DescriptionIGBT Transistors N-Ch 600 Volt 18 AmpIGBT Transistors N-Ch 600 Volt 18 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2 V2.8 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation100 W125 W-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGP12NB60HDSTGP12NB60KPowerMESH
PackagingTubeTubeTube
Continuous Collector Current Ic Max30 A30 A-
Height9.15 mm9.15 mm-
Length10.4 mm10.4 mm-
Width4.6 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current12 A18 A-
Gate Emitter Leakage Current100 nA+/- 100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
Unit Weight0.211644 oz0.211644 oz-
Package Case--TO-220-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220AB
Power Max--125W
Reverse Recovery Time trr--80ns
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--60A
Vce on Max Vge Ic--2.8V @ 15V, 12A
Switching Energy--210μJ (off)
Gate Charge--68nC
Td on off 25°C--5ns/91ns
Test Condition--480V, 12A, 10 Ohm, 15V
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