PartNumber | STGP15M120F3 | STGP15H60DF | STGP15M65DF2 |
Description | IGBT Transistors Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package | IGBT Transistors Trench gate H series 600V 15A HiSpd | IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 650 V |
Collector Emitter Saturation Voltage | 1.85 V | 1.6 V | 1.55 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 30 A | 30 A | 30 A |
Pd Power Dissipation | 259 W | 115 W | 136 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGP15M120F3 | STGP15H60DF | STGP15M65DF2 |
Continuous Collector Current Ic Max | 15 A | 15 A | 30 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 nA | +/- 250 uA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
RoHS | - | Y | Y |
Packaging | - | Tube | - |
Unit Weight | - | 0.211644 oz | - |