PartNumber | STGW10M65DF2 | STGW100N30 | STGW100N30D |
Description | IGBT Transistors PTD HIGH VOLTAGE | ||
Manufacturer | STMicroelectronics | ST | - |
Product Category | IGBT Transistors | IC Chips | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.55 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 20 A | - | - |
Pd Power Dissipation | 115 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | STGW10M65DF2 | - | - |
Continuous Collector Current Ic Max | 20 A | - | - |
Brand | STMicroelectronics | - | - |
Gate Emitter Leakage Current | 250 uA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 600 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.211644 oz | - | - |