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| PartNumber | STGW25H120DF2 | STGW25H120DF | STGW25H120F |
| Description | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | STGW25H120DF2 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 25 A | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 600 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 1.340411 oz | - | - |