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| PartNumber | STH315N10F7-2 | STH315N10F7-6 | STH315-YFAA |
| Description | MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package | MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | H2PAK-2 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 180 A | 180 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 180 nC | 180 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 315 W | 315 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | STripFET | STripFET | - |
| Packaging | Reel | Reel | - |
| Series | STH315N10F7-2 | STH315N10F7-6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 40 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 108 ns | 108 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 148 ns | 148 ns | - |
| Typical Turn On Delay Time | 62 ns | 62 ns | - |
| Unit Weight | 0.139332 oz | 0.056438 oz | - |