STH400N4F6-6 vs STH400N4F6-2 vs STH4010

 
PartNumberSTH400N4F6-6STH400N4F6-2STH4010
DescriptionMOSFET N-channel 40 V 180 A STripFET Pwr MOSFETMOSFET N-CH 40V 180A H2PAK-2
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance1.15 mOhms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge404 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
SeriesSTH400N4F6N-channel STripFET-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronics--
Fall Time168 ns168 ns-
Product TypeMOSFET--
Rise Time184 ns184 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time168 ns168 ns-
Typical Turn On Delay Time71 ns71 ns-
Unit Weight0.056438 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-180 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-4.5 V-
Rds On Drain Source Resistance-1.15 mOhms-
Qg Gate Charge-404 nC-
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