STI300N4F6 vs STI30N65M5 vs STI30NM60N

 
PartNumberSTI300N4F6STI30N65M5STI30NM60N
DescriptionMOSFET N-Ch 40 V 1.4 mOhm 160A I2PAK STripFETMOSFET N-CH 650V 22A I2PAKMOSFET N-CH 600V 25A I2PAK
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance1.7 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge240 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameSTripFET--
PackagingTube--
SeriesSTI300N4F6--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time95 ns--
Product TypeMOSFET--
Rise Time98 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time190 ns--
Typical Turn On Delay Time28 ns--
Unit Weight0.050717 oz--
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