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| PartNumber | STI6N80K5 | STI6N62K3 | STI6N90K5 |
| Description | MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAK package | MOSFET N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an I2PAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | - | 900 V |
| Id Continuous Drain Current | 4.5 A | - | 6 A |
| Rds On Drain Source Resistance | 1.6 Ohms | - | 910 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - | 3 V |
| Vgs Gate Source Voltage | 30 V | - | 30 V |
| Qg Gate Charge | 7.5 nC | - | 11 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 110 W | - | 110 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | SuperMESH | MDmesh |
| Packaging | Tube | - | - |
| Series | STI6N80K5 | STI6N62K3 | STI6N90K5 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.073511 oz | 0.073511 oz | 0.052911 oz |
| Height | - | 4.6 mm | - |
| Length | - | 10.4 mm | - |
| Width | - | 9.35 mm | - |
| Fall Time | - | - | 15.5 ns |
| Rise Time | - | - | 12.2 ns |
| Typical Turn Off Delay Time | - | - | 30.4 ns |
| Typical Turn On Delay Time | - | - | 12.4 ns |