STL10N65M2 vs STL10N60M6 vs STL10N60M2

 
PartNumberSTL10N65M2STL10N60M6STL10N60M2
DescriptionMOSFET N-channel 650 V, 0.85 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageMOSFETMOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySi-Si
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT-8PowerFLAT5x6-4PowerFLAT-5x6-HV-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V600 V
Vgs Gate Source Voltage25 V25 V25 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
ConfigurationSingleSingleSingle
TradenameMDmesh-MDmesh
PackagingReel-Reel
ProductPower MOSFET--
SeriesSTL10N65M2-STL10N60M2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Id Continuous Drain Current-5.5 A5.5 A
Rds On Drain Source Resistance-660 mOhms660 mOhms
Vgs th Gate Source Threshold Voltage-3.25 V3 V
Qg Gate Charge-8.8 nC13.5 nC
Pd Power Dissipation-48 W48 W
Channel Mode-EnhancementEnhancement
Fall Time-10 ns13.2 ns
Rise Time-8.2 ns8 ns
Typical Turn Off Delay Time-23 ns32.5 ns
Typical Turn On Delay Time-11 ns8.8 ns
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