PartNumber | STL10N65M2 | STL10N60M6 | STL10N60M2 |
Description | MOSFET N-channel 650 V, 0.85 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | MOSFET | MOSFET N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-8 | PowerFLAT5x6-4 | PowerFLAT-5x6-HV-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Configuration | Single | Single | Single |
Tradename | MDmesh | - | MDmesh |
Packaging | Reel | - | Reel |
Product | Power MOSFET | - | - |
Series | STL10N65M2 | - | STL10N60M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Id Continuous Drain Current | - | 5.5 A | 5.5 A |
Rds On Drain Source Resistance | - | 660 mOhms | 660 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3.25 V | 3 V |
Qg Gate Charge | - | 8.8 nC | 13.5 nC |
Pd Power Dissipation | - | 48 W | 48 W |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 10 ns | 13.2 ns |
Rise Time | - | 8.2 ns | 8 ns |
Typical Turn Off Delay Time | - | 23 ns | 32.5 ns |
Typical Turn On Delay Time | - | 11 ns | 8.8 ns |