STL11N3LLH6 vs STL11N60M2-EP vs STL11N4LLF5

 
PartNumberSTL11N3LLH6STL11N60M2-EPSTL11N4LLF5
DescriptionMOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI DeepMOSFET N-channel 600 V, 0.600 Ohm typ., 5.5 A MDmesh M2 EP Power MOSFET in a PowerFLAT 5x6 HV packageMOSFET N-Ch 40 V 9.1 mOhm 15 A STripFET V
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerFLAT-3.3x3.3-8-PowerFLAT-3.3x3.3-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V-40 V
Id Continuous Drain Current11 A-15 A
Rds On Drain Source Resistance6 mOhms-9.7 Ohms
Vgs th Gate Source Threshold Voltage1 V-2.5 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge17 nC-12.9 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation50 W-50 W
ConfigurationSingle-Single
TradenameSTripFETMDmesh-
PackagingReel-Reel
SeriesSTL11N3LLH6STL11N60M2-EPSTL11N4LLF5
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Fall Time--5.2 ns
Rise Time--42 ns
Typical Turn Off Delay Time--37 ns
Typical Turn On Delay Time--14 ns
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