STN3N45K3 vs STN3N40K3 vs STN3N45K

 
PartNumberSTN3N45K3STN3N40K3STN3N45K
DescriptionMOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3MOSFET N-Ch 400V 3.3 Ohm 3A SuperMESH3 3.3W
ManufacturerSTMicroelectronicsSTMicroelectronicsSTM
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-4SOT-223-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage450 V400 V-
Id Continuous Drain Current600 mA1.8 A-
Rds On Drain Source Resistance4 Ohms3.4 Ohms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge9.5 nC11 nC-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3 W3.3 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameSuperMESHSuperMESH-
PackagingReelReelReel
SeriesSTN3N45K3STN3N40K3N-channel MDmesh
Transistor Type1 N-Channel Power MOSFET1 N-Channel1 N-Channel
TypeSuperMesh3 Power MOSFET--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time22 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time5.4 ns8 ns-
Factory Pack Quantity40004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time17 ns18 ns-
Typical Turn On Delay Time6.5 ns7 ns-
Unit Weight0.008818 oz0.008818 oz0.008826 oz
Minimum Operating Temperature-- 55 C-
Package Case--SOT-223-3
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--3 V
Id Continuous Drain Current--600 mA
Vds Drain Source Breakdown Voltage--450 V
Vgs th Gate Source Threshold Voltage--4.5 V
Rds On Drain Source Resistance--3.8 Ohms
Qg Gate Charge--6 nC
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