 |  | | |
| PartNumber | STP10NK80Z | STP10NK80Z P10NK80Z | STP10NK80ZF |
| Description | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 160 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | SuperMESH | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP10NK80Z | - | SuperMESH |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | MOSFET | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 9.6 S | - | - |
| Fall Time | 17 ns | - | 17 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | 20 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 65 ns | - | 65 ns |
| Typical Turn On Delay Time | 30 ns | - | 30 ns |
| Unit Weight | 0.050717 oz | - | 0.071959 oz |
| Packaging | - | - | Tube |
| Package Case | - | - | TO-220-3 Full Pack |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-220FP |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 40W |
| Drain to Source Voltage Vdss | - | - | 800V |
| Input Capacitance Ciss Vds | - | - | 2180pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 9A (Tc) |
| Rds On Max Id Vgs | - | - | 900 mOhm @ 4.5A, 10V |
| Vgs th Max Id | - | - | 4.5V @ 100μA |
| Gate Charge Qg Vgs | - | - | 72nC @ 10V |
| Pd Power Dissipation | - | - | 40 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 9 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Rds On Drain Source Resistance | - | - | 900 mOhms |
| Qg Gate Charge | - | - | 72 nC |
| Forward Transconductance Min | - | - | 9.6 S |