STP10NM60N vs STP10NM60ND vs STP10NM60N,10NM60N

 
PartNumberSTP10NM60NSTP10NM60NDSTP10NM60N,10NM60N
DescriptionMOSFET N-channel 600 V Mdmesh 8AMOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current10 A8 A-
Rds On Drain Source Resistance550 mOhms600 mOhms-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation70 W70 W-
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingTubeTube-
SeriesSTP10NM60NSTP10NM60ND-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time15 ns--
Product TypeMOSFETMOSFET-
Rise Time12 ns--
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.011640 oz0.011640 oz-
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