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| PartNumber | STP110N8F7 | STP110N8F6 | STP110N8F6 110N8F6 |
| Description | MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 80 A | 110 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | 6.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 46.8 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 170 W | 200 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | STripFET | STripFET | - |
| Series | STP110N8F7 | STP110N8F6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 32 ns | 48 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 95 ns | 61 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 162 ns | - |
| Typical Turn On Delay Time | 49 ns | 24 ns | - |
| Unit Weight | 0.079014 oz | 0.011640 oz | - |
| Height | - | 15.75 mm | - |
| Length | - | 10.4 mm | - |
| Width | - | 4.6 mm | - |