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| PartNumber | STP12N50M2 | STP12N120K5 | STP12N30 |
| Description | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 1.2 kV | - |
| Id Continuous Drain Current | 10 A | 12 A | - |
| Rds On Drain Source Resistance | 380 mOhms | 620 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 30 V | - |
| Qg Gate Charge | 15 nC | 44.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 85 W | 250 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Series | STP12N50M2 | STP12N120K5 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 34.5 ns | 18.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10.5 ns | 11 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8 ns | 68.5 ns | - |
| Typical Turn On Delay Time | 13.5 ns | 23 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Transistor Type | - | 1 N-Channel | - |