STP26NM60N vs STP26NM60N P26NM60N vs STP26NM60N,26NM60N

 
PartNumberSTP26NM60NSTP26NM60N P26NM60NSTP26NM60N,26NM60N
DescriptionMOSFET N-channel 600 V Mdmesh II Power
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance165 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
Height9.15 mm--
Length10.4 mm--
SeriesSTP26NM60N--
Transistor Type1 N-Channel--
Width4.6 mm--
BrandSTMicroelectronics--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.011640 oz--
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