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| PartNumber | STP2N105K5 | STP2N62K3 | STP2N60 |
| Description | MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in TO-220 package | IGBT Transistors MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 | |
| Manufacturer | STMicroelectronics | ST | ST |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.05 kV | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | Tube | - |
| Series | STP2N105K5 | STP2N62K3 | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 38.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 14.5 ns | - | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Package Case | - | TO-220-3 | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 45 W | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 2.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 620 V | - |
| Rds On Drain Source Resistance | - | 3.6 Ohms | - |
| Qg Gate Charge | - | 15 nC | - |