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| PartNumber | STP6N120K3 | STP6N25,6N25 | STP6N50,6N50 |
| Description | MOSFET N-CH 1200V 6A TO-220 | ||
| Manufacturer | ST | - | - |
| Product Category | FETs - Single | - | - |
| Series | SuperMESH3 | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.011640 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Through Hole | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | TO-220 | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 150W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 1200V (1.2kV) | - | - |
| Input Capacitance Ciss Vds | 1050pF @ 100V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 6A (Tc) | - | - |
| Rds On Max Id Vgs | 2.4 Ohm @ 2.5A, 10V | - | - |
| Vgs th Max Id | 5V @ 100μA | - | - |
| Gate Charge Qg Vgs | 34nC @ 10V | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 32 ns | - | - |
| Rise Time | 12 ns | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Rds On Drain Source Resistance | 2.4 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Qg Gate Charge | 34 nC | - | - |
| Channel Mode | Enhancement | - | - |