PartNumber | STP9N60M2 | STP9N65M2 | STP9N60 |
Description | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 5.5 A | 5 A | - |
Rds On Drain Source Resistance | 780 mOhms | 900 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Qg Gate Charge | 10 nC | 10 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 60 W | 60 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | Tube | - |
Series | STP9N60M2 | STP9N65M2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 13.5 ns | 18 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.5 ns | 6.6 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 22 ns | 22.5 ns | - |
Typical Turn On Delay Time | 8.8 ns | 7.5 ns | - |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Product | - | Power MOSFET | - |