PartNumber | STU6N60M2 | STU6N60DM2 | STU6N62 |
Description | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET | |
Manufacturer | STMicroelectronics | STMicroelectronics | ST |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | - | Details |
Technology | Si | - | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | IPAK-3 | IPAK-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 620 V |
Id Continuous Drain Current | 4.5 A | 5 A | 5.5 A |
Rds On Drain Source Resistance | 1.2 Ohms | 1.1 Ohms | 1.28 Ohms |
Vgs th Gate Source Threshold Voltage | 3 V | 3.25 V | - |
Vgs Gate Source Voltage | 25 V | 25 V | 30 V |
Qg Gate Charge | 8 nC | 6.2 nC | 34 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 60 W | 60 W | 90 W |
Configuration | Single | Single | Single |
Tradename | MDmesh | - | - |
Packaging | Tube | - | Tube |
Series | STU6N60M2 | - | N-channel MDmesh |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 22.5 ns | 19.6 ns | 19 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.4 ns | 5.6 ns | 12.5 ns |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 24 ns | 12 ns | 27 ns |
Typical Turn On Delay Time | 9.5 ns | 9.2 ns | 13 ns |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Channel Mode | - | Enhancement | Enhancement |