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| PartNumber | STW48N60M2 | STW48N60M2-4 | STW48N60M2-4 48N60M2 |
| Description | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 42 A | 42 A | - |
| Rds On Drain Source Resistance | 70 mOhms | 60 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 70 nC | 70 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STW48N60M2 | STW48N60M2-4 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 119 ns | 119 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 17 ns | 17 ns | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 18.5 ns | 18.5 ns | - |
| Unit Weight | 1.340411 oz | - | - |
| Transistor Type | - | 1 N-Channel | - |