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| PartNumber | STW57N65M5 | STW57N65M5-4 | STW57N65M5-4 57N65M5 |
| Description | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | MOSFET N-chanel 650 V 0.056 Ohm typ 42 A | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-4 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 42 A | 42 A | - |
| Rds On Drain Source Resistance | 63 mOhms | 63 mOhms | - |
| Pd Power Dissipation | 250 W | 250 W | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STW57N65M5 | STW57N65M5-4 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 1.340411 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 98 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 9 ns | - |