PartNumber | STWA48N60DM2 | STWA48N60M6 | STWA48N60M2 |
Description | MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package | MOSFET | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 long leads package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
Id Continuous Drain Current | 40 A | 39 A | 42 A |
Rds On Drain Source Resistance | 65 mOhms | 69 mOhms | 70 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3.25 V | 2 V |
Vgs Gate Source Voltage | 25 V | 10 V | 25 V |
Qg Gate Charge | 70 nC | 57 nC | 70 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 250 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | - | MDmesh |
Series | STWA48N60DM2 | - | STWA48N60M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 9.8 ns | 9.5 ns | 119 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 34 ns | 17 ns |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 131 ns | 60 ns | 13 ns |
Typical Turn On Delay Time | 27 ns | 28 ns | 18.5 ns |