STY60NM50 vs STY60NM50,60NM50 vs STY60NM50,Y60NM50,

 
PartNumberSTY60NM50STY60NM50,60NM50STY60NM50,Y60NM50,
DescriptionMOSFET N-Ch 500 Volt 60 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseMax247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance50 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation560 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
Height20.3 mm--
Length15.9 mm--
SeriesSTY60NM50--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5.3 mm--
BrandSTMicroelectronics--
Fall Time46 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Typical Turn On Delay Time51 ns--
Unit Weight1.340411 oz--
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