SUM90N03-2M2P-E3 vs SUM90N03-2M2P vs SUM90N03-2M2P-E3 FDB88

 
PartNumberSUM90N03-2M2P-E3SUM90N03-2M2PSUM90N03-2M2P-E3 FDB88
DescriptionMOSFET 30V 90A 250W
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance1.8 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge257 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesSUM--
Transistor Type2 N-Channel--
Width9.65 mm--
BrandVishay / Siliconix--
Forward Transconductance Min160 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.050717 oz--
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