SUP10250E-GE3 vs SUP10250E vs SUP110P04-05-E3

 
PartNumberSUP10250E-GE3SUP10250ESUP110P04-05-E3
DescriptionMOSFET 250V Vds 20V Vgs TO-220
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current63 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge88 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameThunderFET--
PackagingTube--
SeriesSUP--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min63 S--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time93 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.063493 oz--
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