SUP70040E-GE3 vs SUP70030E-GE3 vs SUP70040E

 
PartNumberSUP70040E-GE3SUP70030E-GE3SUP70040E
DescriptionMOSFET 100V Vds 20V Vgs TO-220MOSFET 100V Vds; 20V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current120 A150 A-
Rds On Drain Source Resistance3.2 mOhms3.18 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge120 nC214 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET--
PackagingTubeTube-
SeriesSUP--
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min82 S110 S-
Fall Time15 ns15 ns-
Product TypeMOSFETMOSFET-
Rise Time22 ns13 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns50 ns-
Typical Turn On Delay Time15 ns30 ns-
Unit Weight0.211644 oz--
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